AOT8N60 Alpha & Omega Semiconductor
Артикул
AOT8N60
Бренд
Alpha & Omega Semiconductor
Описание
MOSFET N-CH 600V 8A TO220, N-Channel 600 V 8A (Tc) 208W (Tc) Through Hole TO-220
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/AOT8N60.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Rds On (Max) @ Id, Vgs
900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Supplier Device Package
TO-220
Package / Case
TO-220-3
Series
-
Package
Tube
Part Status
Obsolete
Mounting Type
Through Hole
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Operating Temperature
-55°C ~ 150°C (TJ)
Other Names
785-1190-5
Power Dissipation (Max)
208W (Tc)
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