BDV65B Central Semiconductor
Артикул
BDV65B
Бренд
Central Semiconductor
Описание
POWER TRANSISTOR NPN TO218, Bipolar (BJT) Transistor NPN 100 V 12 A 60MHz 125 W Through Hole TO-218
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Series
-
Standard Package
1
Supplier Device Package
TO-218
Power - Max
125 W
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
100 V
Frequency - Transition
60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 4V
Current - Collector (Ic) (Max)
12 A
Vce Saturation (Max) @ Ib, Ic
-
Other Names
BDV65BCS
HTSUS
8541.29.0075
Package
Bulk
Part Status
Obsolete
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-218-3
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Current - Collector Cutoff (Max)
-
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