TIP35B Central Semiconductor
Артикул
TIP35B
Бренд
Central Semiconductor
Описание
TRANS GENERAL PURPOSE TO-218, Bipolar (BJT) Transistor NPN 80 V 25 A 3MHz 125 W Through Hole TO-218
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/TIP35B.jpg
Standard Package
100
Supplier Device Package
TO-218
Power - Max
125 W
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
80 V
Frequency - Transition
3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 15A, 4V
Current - Collector (Ic) (Max)
25 A
Vce Saturation (Max) @ Ib, Ic
-
HTSUS
8541.29.0095
ECCN
EAR99
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-218-3
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Current - Collector Cutoff (Max)
-
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