BS107P Diodes Incorporated
Артикул
BS107P
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 200V 120MA TO92-3, N-Channel 200 V 120mA (Ta) 500mW (Ta) Through Hole TO-92
Цена
119 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BS107P.jpg
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
120mA (Ta)
Rds On (Max) @ Id, Vgs
30Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
-
Drive Voltage (Max Rds On, Min Rds On)
2.6V, 5V
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Series
-
Package
Bulk
Part Status
Active
Base Product Number
BS107
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
BS107P-NDR,BS107
Standard Package
4,000
Power Dissipation (Max)
500mW (Ta)
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