BSS8402DW-7 Diodes Incorporated
Артикул
BSS8402DW-7
Бренд
Diodes Incorporated
Описание
MOSFET N/P-CH 60V/50V SC70-6, Mosfet Array N and P-Channel 60V, 50V 115mA, 130mA 200mW Surface Mount SOT-363
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/BSS8402DW-7.jpg
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Power - Max
200mW
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V, 50V
Current - Continuous Drain (Id) @ 25°C
115mA, 130mA
Rds On (Max) @ Id, Vgs
7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Other Names
BSS8402DW7,BSS8402DWDITR,BSS8402DWDICT
Operating Temperature
-55°C ~ 150°C (TJ)
Standard Package
3,000
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Discontinued at Digi-Key
Mounting Type
Surface Mount
Base Product Number
BSS8402DW
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
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