DMG6601LVT-7 Diodes Incorporated
Артикул
DMG6601LVT-7
Бренд
Diodes Incorporated
Описание
MOSFET N/P-CH 30V 26TSOT, Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-23
Цена
72 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/DMG6601LVT-7.jpg
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
TSOT-23
Power - Max
850mW
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.8A, 2.5A
Rds On (Max) @ Id, Vgs
55mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.3nC @ 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Standard Package
3,000
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Base Product Number
DMG6601
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
DMG6601LVT-7DICT,DMG6601LVT-7DITR,DMG6601LVT-7DIDKR,DMG6601LVT7
Input Capacitance (Ciss) (Max) @ Vds
422pF @ 15V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут