DMHC3025LSD-13 Diodes Incorporated
Артикул
DMHC3025LSD-13
Бренд
Diodes Incorporated
Описание
MOSFET 2N/2P-CH 30V 8SO, Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
Цена
164 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/DMHC3025LSD-13.jpg
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Power - Max
1.5W
FET Type
2 N and 2 P-Channel (H-Bridge)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6A, 4.2A
Rds On (Max) @ Id, Vgs
25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.7nC @ 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Standard Package
2,500
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Base Product Number
DMHC3025
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
DMHC3025LSD-13DITR,DMHC3025LSD-13DIDKR,DMHC3025LSD-13DICT,DMHC3025LSD13
Input Capacitance (Ciss) (Max) @ Vds
590pF @ 15V
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