DMN10H099SK3-13 Diodes Incorporated
Артикул
DMN10H099SK3-13
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 100V 17A TO252, N-Channel 100 V 17A (Tc) 34W (Tc) Surface Mount TO-252-3
Цена
117 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/DMN10H099SK3-13.jpg
Supplier Device Package
TO-252-3
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Rds On (Max) @ Id, Vgs
80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1172 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs (Max)
±20V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names
DMN10H099SK3-13DICT,DMN10H099SK3-13DIDKR,DMN10H099SK3-13DITR
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Base Product Number
DMN10
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
34W (Tc)
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