DMN10H170SFG-13 Diodes Incorporated
Артикул
DMN10H170SFG-13
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 100V PWRDI3333, N-Channel 100 V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8
Цена
105 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/DMN10H170SFG-13.jpg
Supplier Device Package
PowerDI3333-8
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs
122mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
870.7 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Package / Case
8-PowerVDFN
Other Names
DMN10H170SFG-13DKR-ND,DMN10H170SFG-13CT-ND,DMN10H170SFG-13DICT,DMN10H170SFG-13DITR,DMN10H170SFG-13TR-ND,DMN10H170SFG-13CT,DMN10H170SFG-13DKR,DMN10H170SFG-13TR,DMN10H170SFG-13DIDKR
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Base Product Number
DMN10
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
940mW (Ta)
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