DMN10H220LE-13 Diodes Incorporated
Артикул
DMN10H220LE-13
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 100V 2.3A SOT223, N-Channel 100 V 2.3A (Ta) 1.8W (Ta) Surface Mount SOT-223-3
Цена
112 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/DMN10H220LE-13.jpg
Supplier Device Package
SOT-223-3
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Rds On (Max) @ Id, Vgs
220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
401 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Package / Case
TO-261-4, TO-261AA
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Base Product Number
DMN10
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
DMN10H220LE-13DIDKR,DMN10H220LE-13DICT,DMN10H220LE-13DITR
Standard Package
2,500
Mounting Type
Surface Mount
Power Dissipation (Max)
1.8W (Ta)
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