DMN2022UFDF-7 Diodes Incorporated
Артикул
DMN2022UFDF-7
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 20V 7.9A 6UDFN, N-Channel 20 V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
Цена
86 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/DMN2022UFDF-7.jpg
Supplier Device Package
U-DFN2020-6 (Type F)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
7.9A (Ta)
Rds On (Max) @ Id, Vgs
22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
907 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Vgs (Max)
±8V
Package / Case
6-UDFN Exposed Pad
Other Names
DMN2022UFDF-7DICT,DMN2022UFDF-7DITR,DMN2022UFDF-7DIDKR
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Base Product Number
DMN2022
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
660mW (Ta)
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