DMN2029USD-13 Diodes Incorporated
Артикул
DMN2029USD-13
Бренд
Diodes Incorporated
Описание
MOSFET 2N-CH 20V 5.8A 8SO, Mosfet Array 2 N-Channel (Dual) 20V 5.8A 1.2W Surface Mount 8-SO
Цена
76 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/DMN2029USD-13.jpg
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Power - Max
1.2W
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
5.8A
Rds On (Max) @ Id, Vgs
25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18.6nC @ 8V
Other Names
DMN2029USD-13DITR,DMN2029USD-13DICT,DMN2029USD-13DIDKR
Operating Temperature
-55°C ~ 150°C (TJ)
Standard Package
2,500
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Base Product Number
DMN2029
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds
1171pF @ 10V
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