DMN26D0UFB4-7 Diodes Incorporated
Артикул
DMN26D0UFB4-7
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 20V 230MA 3DFN, N-Channel 20 V 230mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3
Цена
64 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/DMN26D0UFB4-7.jpg
Supplier Device Package
X2-DFN1006-3
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)
Rds On (Max) @ Id, Vgs
3Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
14.1 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Vgs (Max)
±10V
Package / Case
3-XFDFN
Other Names
DMN26D0UFB4-7DICT,DMN26D0UFB4-7DIDKR,DMN26D0UFB47,DMN26D0UFB4-7DITR
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Mounting Type
Surface Mount
Base Product Number
DMN26
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Power Dissipation (Max)
350mW (Ta)
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