DMN3030LSS-13 Diodes Incorporated
Артикул
DMN3030LSS-13
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 30V 9A 8SOP, N-Channel 30 V 9A (Ta) 2.5W (Ta) Surface Mount 8-SO
Цена
91 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/DMN3030LSS-13.jpg
Supplier Device Package
8-SO
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Rds On (Max) @ Id, Vgs
18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
741 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±25V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Base Product Number
DMN3030
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
DMN3030LSS-13DIDKR,-DMN3030LSS-13DIDKR,DMN3030LSS-13DITR,DMN3030LSS-13-ND,DMN3030LSS-13DICT,-DMN3030LSS-13DICT,-DMN3030LSS-13DITR
Standard Package
2,500
Mounting Type
Surface Mount
Power Dissipation (Max)
2.5W (Ta)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут