DMN65D8LFB-7 Diodes Incorporated
Артикул
DMN65D8LFB-7
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 60V 260MA 3DFN, N-Channel 60 V 260mA (Ta) 430mW (Ta) Surface Mount X1-DFN1006-3
Цена
62 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/DMN65D8LFB-7.jpg
Supplier Device Package
X1-DFN1006-3
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
260mA (Ta)
Rds On (Max) @ Id, Vgs
3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Vgs (Max)
±20V
Package / Case
3-UFDFN
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Base Product Number
DMN65
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
DMN65D8LFB-7DIDKR,DMN65D8LFB-7DITR,DMN65D8LFB-7DICT,DMN65D8LFB-7-ND
Standard Package
3,000
Power Dissipation (Max)
430mW (Ta)
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