DMP1200UFR4-7 Diodes Incorporated
Артикул
DMP1200UFR4-7
Бренд
Diodes Incorporated
Описание
MOSFET P-CH 12V 2A X2-DFN1010-3, P-Channel 12 V 2A (Ta) 480mW (Ta) Surface Mount X2-DFN1010-3
Цена
79 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/DMP1200UFR4-7.jpg
Supplier Device Package
X2-DFN1010-3
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
514 pF @ 5 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Vgs (Max)
±8V
Package / Case
3-XFDFN
Other Names
DMP1200UFR4-7DITR,DMP1200UFR4-7DICT,DMP1200UFR4-7DIDKR
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Base Product Number
DMP1200
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
480mW (Ta)
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