DMT10H010SPS-13 Diodes Incorporated
Артикул
DMT10H010SPS-13
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 100V PWRDI5060, N-Channel 100 V 10.7A (Ta), 113A (Tc) 1.2W (Ta) Surface Mount PowerDI5060-8
Цена
94 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/DMT10H010SPS-13.jpg
Supplier Device Package
PowerDI5060-8
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10.7A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs
8.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4468 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs (Max)
±20V
Package / Case
8-PowerTDFN
Other Names
DMT10H010SPS-13DIDKR,DMT10H010SPS-13DITR,DMT10H010SPS-13DICT
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Base Product Number
DMT10
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
1.2W (Ta)
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