ZXM62N03GTA Diodes Incorporated
Артикул
ZXM62N03GTA
Бренд
Diodes Incorporated
Описание
MOSFET N-CH 30V 3.4A/4.7A SOT223, N-Channel 30 V 3.4A (Ta), 4.7A (Tc) 2W (Ta) Surface Mount SOT-223-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/ZXM62N03GTA.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta), 4.7A (Tc)
Rds On (Max) @ Id, Vgs
110mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Supplier Device Package
SOT-223-3
Package / Case
TO-261-4, TO-261AA
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ZXM62N03GTR,ZXM62N03GTA-ND,ZXM62N03GCT,ZXM62N03GDKR
Standard Package
1,000
Mounting Type
Surface Mount
Power Dissipation (Max)
2W (Ta)
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