FCP190N65F Fairchild Semiconductor
Артикул
FCP190N65F
Бренд
Fairchild Semiconductor
Описание
POWER FIELD-EFFECT TRANSISTOR, 2, N-Channel 650 V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3
Цена
277 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FCP190N65F.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20.6A (Tc)
Rds On (Max) @ Id, Vgs
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3225 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Supplier Device Package
TO-220-3
Series
FRFET®, SuperFET® II
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
HTSUS
0000.00.0000
Other Names
ONSFSCFCP190N65F,2156-FCP190N65F
Standard Package
1
Base Product Number
FCP190
Drive Voltage (Max Rds On, Min Rds On)
10V
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