FDB045AN08A0 Fairchild Semiconductor
Артикул
FDB045AN08A0
Бренд
Fairchild Semiconductor
Описание
POWER FIELD-EFFECT TRANSISTOR, 1, N-Channel 75 V 19A (Ta), 90A (Tc) 310W (Tc) Surface Mount D2PAK (TO-263)
Цена
312 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDB045AN08A0.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs
4.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
138 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6600 pF @ 25 V
FET Feature
-
FET Type
N-Channel
Power Dissipation (Max)
310W (Tc)
Supplier Device Package
D2PAK (TO-263)
Series
PowerTrench®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
HTSUS
0000.00.0000
Other Names
ONSONSFDB045AN08A0,2156-FDB045AN08A0
Standard Package
1
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
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