FDFS2P102A Fairchild Semiconductor
Артикул
FDFS2P102A
Бренд
Fairchild Semiconductor
Описание
MOSFET P-CH 20V 3.3A 8SOIC, P-Channel 20 V 3.3A (Ta) 900mW (Ta) Surface Mount 8-SOIC
Цена
172 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDFS2P102A.jpg
FET Feature
Schottky Diode (Isolated)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta)
Rds On (Max) @ Id, Vgs
125mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 10 V
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
FET Type
P-Channel
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Series
PowerTrench®
Package
Bulk
Part Status
Obsolete
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
2,500
Other Names
2156-FDFS2P102A,FAIFSCFDFS2P102A,2156-FDFS2P102A-FSTR-ND
Power Dissipation (Max)
900mW (Ta)
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