FDFS2P103A Fairchild Semiconductor
Артикул
FDFS2P103A
Бренд
Fairchild Semiconductor
Описание
MOSFET P-CH 30V 5.3A 8SOIC, P-Channel 30 V 5.3A (Ta) 900mW (Ta) Surface Mount 8-SOIC
Цена
74 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDFS2P103A.jpg
FET Feature
Schottky Diode (Isolated)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5.3A (Ta)
Rds On (Max) @ Id, Vgs
59mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
535 pF @ 15 V
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±25V
FET Type
P-Channel
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Series
PowerTrench®
Package
Bulk
Part Status
Obsolete
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
2,500
Other Names
2156-FDFS2P103A-FSTR-ND,2156-FDFS2P103A,FAIFSCFDFS2P103A
Power Dissipation (Max)
900mW (Ta)
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