FDP032N08 Fairchild Semiconductor
Артикул
FDP032N08
Бренд
Fairchild Semiconductor
Описание
POWER FIELD-EFFECT TRANSISTOR, 1, N-Channel 75 V 120A (Tc) 375W (Tc) Through Hole TO-220-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDP032N08.jpg
FET Type
N-Channel
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
15160 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220-3
Series
-
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
Other Names
2156-FDP032N08-600039
Standard Package
1
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Power Dissipation (Max)
375W (Tc)
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