FDP045N10AF102 Fairchild Semiconductor
Артикул
FDP045N10AF102
Бренд
Fairchild Semiconductor
Описание
120A, 100V, N-CHANNEL POWER MOSF, N-Channel 100 V 120A (Tc) 263W (Tc) Through Hole TO-220-3
Цена
396 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDP045N10AF102.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5270 pF @ 50 V
FET Feature
-
FET Type
N-Channel
Power Dissipation (Max)
263W (Tc)
Supplier Device Package
TO-220-3
Series
PowerTrench®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
HTSUS
0000.00.0000
Other Names
FAIFSCFDP045N10AF102,2156-FDP045N10AF102ND
Standard Package
1
Drive Voltage (Max Rds On, Min Rds On)
10V
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