FDS2672 Fairchild Semiconductor
Артикул
FDS2672
Бренд
Fairchild Semiconductor
Описание
POWER FIELD-EFFECT TRANSISTOR, 3, N-Channel 200 V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Цена
146 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDS2672.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Rds On (Max) @ Id, Vgs
70mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2535 pF @ 100 V
FET Feature
-
FET Type
N-Channel
Power Dissipation (Max)
2.5W (Ta)
Supplier Device Package
8-SOIC
Series
UltraFET™
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
HTSUS
0000.00.0000
Other Names
FAIFSCFDS2672,2156-FDS2672
Standard Package
1
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
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