FGY75N60SMD Fairchild Semiconductor
Артикул
FGY75N60SMD
Бренд
Fairchild Semiconductor
Описание
INSULATED GATE BIPOLAR TRANSISTO, IGBT Field Stop 600 V 150 A 750 W Through Hole PowerTO-247-3
Цена
844 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Series
-
Power - Max
750 W
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
150 A
Test Condition
400V, 75A, 3Ohm, 15V
IGBT Type
Field Stop
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 75A
Current - Collector Pulsed (Icm)
225 A
Switching Energy
2.3mJ (on), 770µJ (off)
Gate Charge
248 nC
Reverse Recovery Time (trr)
55 ns
Supplier Device Package
PowerTO-247-3
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
HTSUS
0000.00.0000
Other Names
2156-FGY75N60SMD,ONSONSFGY75N60SMD
Standard Package
1
Input Type
Standard
Td (on/off) @ 25°C
24ns/136ns
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут