FQA38N30 Fairchild Semiconductor
Артикул
FQA38N30
Бренд
Fairchild Semiconductor
Описание
38.4A, 300V, N-CHANNEL, MOSFET, N-Channel 300 V 38.4A (Tc) 290W (Tc) Through Hole TO-3P
Цена
586 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQA38N30.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
38.4A (Tc)
Rds On (Max) @ Id, Vgs
85mOhm @ 19.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±30V
FET Feature
-
Power Dissipation (Max)
290W (Tc)
Drain to Source Voltage (Vdss)
300 V
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 25 V
REACH Status
REACH Unaffected
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Series
QFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Base Product Number
FQA3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-FQA38N30,FAIFSCFQA38N30
Standard Package
1
Drive Voltage (Max Rds On, Min Rds On)
10V
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