FQA9N90 Fairchild Semiconductor
Артикул
FQA9N90
Бренд
Fairchild Semiconductor
Описание
N-CHANNEL POWER MOSFET, N-Channel 900 V 8.6A (Tc) 240W (Tc) Through Hole TO-3P
Цена
317 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQA9N90.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 4.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
FET Feature
-
Supplier Device Package
TO-3P
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
Series
QFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FQA9N90,FAIFSCFQA9N90
Standard Package
1
Power Dissipation (Max)
240W (Tc)
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