FQAF19N60 Fairchild Semiconductor
Артикул
FQAF19N60
Бренд
Fairchild Semiconductor
Описание
MOSFET N-CH 600V 11.2A TO3PF, N-Channel 600 V 11.2A (Tc) 120W (Tc) Through Hole TO-3PF
Цена
420 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQAF19N60.jpg
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
11.2A (Tc)
Rds On (Max) @ Id, Vgs
380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
FET Type
N-Channel
Package / Case
TO-3P-3 Full Pack
Supplier Device Package
TO-3PF
Series
QFET®
Package
Tube
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
360
Other Names
FAIFSCFQAF19N60,2156-FQAF19N60-FS
Power Dissipation (Max)
120W (Tc)
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