FQB27P06TM Fairchild Semiconductor
Артикул
FQB27P06TM
Бренд
Fairchild Semiconductor
Описание
POWER FIELD-EFFECT TRANSISTOR, 2, P-Channel 60 V 27A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D2PAK (TO-263)
Цена
105 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQB27P06TM.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Rds On (Max) @ Id, Vgs
70mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
FET Feature
-
FET Type
P-Channel
Power Dissipation (Max)
3.75W (Ta), 120W (Tc)
Supplier Device Package
D2PAK (TO-263)
Series
QFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
HTSUS
0000.00.0000
Other Names
FAIFSCFQB27P06TM,2156-FQB27P06TM
Standard Package
1
Drive Voltage (Max Rds On, Min Rds On)
10V
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