FQB5N60TM Fairchild Semiconductor
Артикул
FQB5N60TM
Бренд
Fairchild Semiconductor
Описание
MOSFET N-CH 600V 5A D2PAK, N-Channel 600 V 5A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D2PAK (TO-263)
Цена
121 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQB5N60TM.jpg
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
730 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
D2PAK (TO-263)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Series
QFET®
Package
Bulk
Part Status
Obsolete
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Other Names
2156-FQB5N60TM-FSTR,FAIFSCFQB5N60TM
Power Dissipation (Max)
3.13W (Ta), 120W (Tc)
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