FQU12N20TU Fairchild Semiconductor
Артикул
FQU12N20TU
Бренд
Fairchild Semiconductor
Описание
MOSFET N-CH 200V 9A I-PAK, N-Channel 200 V 9A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK
Цена
93 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQU12N20TU.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Rds On (Max) @ Id, Vgs
280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
910 pF @ 25 V
FET Feature
-
FET Type
N-Channel
Power Dissipation (Max)
2.5W (Ta), 55W (Tc)
Supplier Device Package
I-PAK
Series
QFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
HTSUS
0000.00.0000
Other Names
2156-FQU12N20TU,FAIFSCFQU12N20TU
Standard Package
1
Drive Voltage (Max Rds On, Min Rds On)
10V
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