HGT1S12N60A4DS Fairchild Semiconductor
Артикул
HGT1S12N60A4DS
Бренд
Fairchild Semiconductor
Описание
IGBT, 54A, 600V, N-CHANNEL, TO-2, IGBT - 600 V 54 A 167 W Surface Mount TO-263AB
Цена
591 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/HGT1S12N60A4DS.jpg
REACH Status
REACH Affected
Input Type
Standard
Reverse Recovery Time (trr)
30 ns
Current - Collector (Ic) (Max)
54 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Test Condition
390V, 12A, 10Ohm, 15V
IGBT Type
-
Current - Collector Pulsed (Icm)
96 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Switching Energy
55µJ (on), 50µJ (off)
Gate Charge
120 nC
Power - Max
167 W
Supplier Device Package
TO-263AB
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-HGT1S12N60A4DS,FAIFSCHGT1S12N60A4DS
Standard Package
1
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Td (on/off) @ 25°C
17ns/96ns
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