HGTP12N60A4D Fairchild Semiconductor
Артикул
HGTP12N60A4D
Бренд
Fairchild Semiconductor
Описание
INSULATED GATE BIPOLAR TRANSISTO, IGBT - 600 V 54 A 167 W Through Hole TO-220-3
Цена
289 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/HGTP12N60A4D.jpg
Reverse Recovery Time (trr)
30 ns
Power - Max
167 W
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
54 A
Test Condition
390V, 12A, 10Ohm, 15V
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Current - Collector Pulsed (Icm)
96 A
Switching Energy
55µJ (on), 50µJ (off)
Gate Charge
78 nC
Supplier Device Package
TO-220-3
Input Type
Standard
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HGTP12N60A4D,FAIFSCHGTP12N60A4D
Standard Package
1
Td (on/off) @ 25°C
17ns/96ns
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут