HUF76429D3 Fairchild Semiconductor
Артикул
HUF76429D3
Бренд
Fairchild Semiconductor
Описание
N-CHANNEL POWER MOSFET, N-Channel 60 V 20A (Tc) 110W (Tc) Through Hole I-PAK
Цена
114 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/HUF76429D3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1480 pF @ 25 V
FET Feature
-
Supplier Device Package
I-PAK
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Series
UltraFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HUF76429D3,FAIFSCHUF76429D3
Standard Package
1
Power Dissipation (Max)
110W (Tc)
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