ISL9N318AD3ST Fairchild Semiconductor
Артикул
ISL9N318AD3ST
Бренд
Fairchild Semiconductor
Описание
N-CHANNEL POWER MOSFET, N-Channel 30 V 30A (Tc) 55W (Ta) Surface Mount TO-263AB
Цена
69 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/ISL9N318AD3ST.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 15 V
FET Feature
-
Supplier Device Package
TO-263AB
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCISL9N318AD3ST,2156-ISL9N318AD3ST
Standard Package
2,500
Power Dissipation (Max)
55W (Ta)
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