G2R120MT33J GeneSiC Semiconductor
Артикул
G2R120MT33J
Бренд
GeneSiC Semiconductor
Описание
SIC MOSFET N-CH TO263-7, N-Channel 3300 V 35A - Surface Mount TO-263-7
Цена
17 460 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/G2R120MT33J.jpg
California Prop 65
Warning Information
Power Dissipation (Max)
-
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
35A
Rds On (Max) @ Id, Vgs
156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3706 pF @ 1000 V
FET Feature
-
Supplier Device Package
TO-263-7
Base Product Number
G2R120
Series
G2R™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-8, D?Pak (7 Leads + Tab), TO-263CA
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
1242-G2R120MT33J
Standard Package
50
Drive Voltage (Max Rds On, Min Rds On)
20V
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