G3R160MT12D GeneSiC Semiconductor
Артикул
G3R160MT12D
Бренд
GeneSiC Semiconductor
Описание
SIC MOSFET N-CH 22A TO247-3, N-Channel 1200 V 22A (Tc) 123W (Tc) Through Hole TO-247-3
Цена
1 226 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/G3R160MT12D.jpg
California Prop 65
Warning Information
Power Dissipation (Max)
123W (Tc)
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Rds On (Max) @ Id, Vgs
192mOhm @ 10A, 15V
Vgs(th) (Max) @ Id
2.69V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
730 pF @ 800 V
FET Feature
-
Supplier Device Package
TO-247-3
Base Product Number
G3R160
Series
G3R™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
1242-G3R160MT12D
Standard Package
30
Drive Voltage (Max Rds On, Min Rds On)
15V
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