BDX33C Harris
Артикул
BDX33C
Бренд
Harris
Описание
NPN EPITAXIAL SILICON TRANSISTOR, Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A - 70 W Through Hole TO-220AB
Цена
93 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Series
-
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Supplier Device Package
TO-220AB
Power - Max
70 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 6mA, 3A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A, 3V
Base Product Number
BDX33
REACH Status
REACH Unaffected
Standard Package
1
Package
Bulk
Part Status
Active
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-BDX33C,ONSONSBDX33C
Frequency - Transition
-
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