IRF512 Harris
Артикул
IRF512
Бренд
Harris
Описание
N-CHANNEL POWER MOSFET, N-Channel 100 V 4.9A (Tc) 43W (Tc) Through Hole TO-220
Цена
74 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
-
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
740mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
135 pF @ 25 V
FET Feature
-
Supplier Device Package
TO-220
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRF512,HARHARIRF512
Standard Package
1
REACH Status
Vendor Undefined
Power Dissipation (Max)
43W (Tc)
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