IRF620 Harris
Артикул
IRF620
Бренд
Harris
Описание
5.0A 200V 0.800 OHM N-CHANNEL, N-Channel 200 V 6A (Tc) 70W (Tc) Through Hole TO-220AB
Цена
47 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF620.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
800mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
70W (Tc)
Drain to Source Voltage (Vdss)
200 V
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
REACH Status
Vendor Undefined
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Series
PowerMESH™ II
Package
Bulk
Part Status
Active
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Base Product Number
IRF6
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-IRF620,HARHARIRF620
Standard Package
1
Drive Voltage (Max Rds On, Min Rds On)
10V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут