IRF730 Harris
Артикул
IRF730
Бренд
Harris
Описание
N-CHANNEL, MOSFET, N-Channel 400 V 5.5A (Tc) 100W (Tc) Through Hole TO-220
Цена
196 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
PowerMESH™ II
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Rds On (Max) @ Id, Vgs
1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Drain to Source Voltage (Vdss)
400 V
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
REACH Status
Vendor Undefined
Supplier Device Package
TO-220
Package
Bulk
Part Status
Active
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Base Product Number
IRF7
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-IRF730,HARHARIRF730
Standard Package
1
Package / Case
TO-220-3
Drive Voltage (Max Rds On, Min Rds On)
10V
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