IRF820 Harris
Артикул
IRF820
Бренд
Harris
Описание
2.5A, 500V, 3.000 OHM, N-CHANNEL, N-Channel 500 V 4A (Tc) 80W (Tc) Through Hole TO-220AB
Цена
95 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
PowerMESH™ II
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Drain to Source Voltage (Vdss)
500 V
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
315 pF @ 25 V
REACH Status
Vendor Undefined
Supplier Device Package
TO-220AB
Package
Bulk
Part Status
Active
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Base Product Number
IRF8
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-IRF820,HARHARIRF820
Standard Package
1
Package / Case
TO-220-3
Drive Voltage (Max Rds On, Min Rds On)
10V
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