IRFD110 Harris
Артикул
IRFD110
Бренд
Harris
Описание
1A, 100V, 0.600 OHM, N-CHANNEL, N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Цена
91 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
-
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Rds On (Max) @ Id, Vgs
540mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
REACH Status
Vendor Undefined
Supplier Device Package
4-DIP, Hexdip, HVMDIP
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Base Product Number
IRFD110
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-IRFD110,HARHARIRFD110
Standard Package
1
Package / Case
4-DIP (0.300", 7.62mm)
Drive Voltage (Max Rds On, Min Rds On)
10V
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