IRFD210 Harris
Артикул
IRFD210
Бренд
Harris
Описание
0.6A 200V 1.500 OHM N-CHANNEL, N-Channel 200 V 600mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Цена
145 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
-
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
600mA (Ta)
Rds On (Max) @ Id, Vgs
1.5Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Drain to Source Voltage (Vdss)
200 V
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
REACH Status
REACH Unaffected
Supplier Device Package
4-DIP, Hexdip, HVMDIP
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Base Product Number
IRFD210
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-IRFD210,HARHARIRFD210
Standard Package
1
Package / Case
4-DIP (0.300", 7.62mm)
Drive Voltage (Max Rds On, Min Rds On)
10V
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