IRFR9110 Harris
Артикул
IRFR9110
Бренд
Harris
Описание
MOSFET P-CH 100V 3.1A DPAK, P-Channel 100 V 3.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-PAK (TO-252AA)
Цена
103 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
-
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
REACH Status
REACH Unaffected
Supplier Device Package
D-PAK (TO-252AA)
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-IRFR9110,HARHARIRFR9110
Standard Package
1
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
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