IRFB61N15DPBF Infineon Technologies
Артикул
IRFB61N15DPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 150V 60A TO220AB, N-Channel 150 V 60A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB
Цена
189 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFB61N15DPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.4W (Ta), 330W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Rds On (Max) @ Id, Vgs
32mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3470 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
SP001560242,*IRFB61N15DPBF
Mounting Type
Through Hole
Standard Package
1,000
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±30V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут