AIMW120R035M1HXKSA1 Infineon Technologies
Артикул
AIMW120R035M1HXKSA1
Бренд
Infineon Technologies
Описание
1200V COOLSIC MOSFET PG-TO247-3, N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41
Цена
4 172 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
Automotive, AEC-Q101, CoolSiC™
Moisture Sensitivity Level (MSL)
1 (Unlimited)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
2130 pF @ 800 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
46mOhm @ 25A, 18V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 18 V
Vgs (Max)
+23V, -7V
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
228W (Tc)
Standard Package
30
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-41
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-AIMW120R035M1HXKSA1,SP005417579
FET Feature
-
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