BC858B Infineon Technologies
Артикул
BC858B
Бренд
Infineon Technologies
Описание
BIPOLAR GEN PURPOSE TRANSISTOR, Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW Surface Mount SOT-23-3 (TO-236)
Цена
3 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/BC858B.jpg
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Supplier Device Package
SOT-23-3 (TO-236)
Power - Max
250 mW
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA, 5V
REACH Status
REACH Unaffected
Standard Package
10,000
Other Names
INFINFBC858B,2156-BC858B
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
RoHS Status
Not applicable
ECCN
EAR99
HTSUS
8541.21.0075
Frequency - Transition
100MHz
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