BSC025N08LS5ATMA1 Infineon Technologies
Артикул
BSC025N08LS5ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 80V 100A TDSON-8-7, N-Channel 80 V 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-7
Цена
713 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC025N08LS5ATMA1.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7500 pF @ 40 V
FET Feature
-
Base Product Number
BSC025
Supplier Device Package
PG-TDSON-8-7
Package / Case
8-PowerTDFN
Series
OptiMOS™ 5
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-BSC025N08LS5ATMA1TR,448-BSC025N08LS5ATMA1CT,448-BSC025N08LS5ATMA1DKR,SP001385618
Standard Package
5,000
Power Dissipation (Max)
2.5W (Ta), 156W (Tc)
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